Substrate thickness measuring during polishing

ABSTRACT

A method for determining a polishing endpoint includes obtaining spectra from different zones on a substrate during different times in a polishing sequence, matching the spectra with indexes in a library and using the indexes to determining a polishing rate for each of the different zones from the indexes. An adjusted polishing rate can be determined for one of the zones, which causes the substrate to have a desired profile when the polishing end time is reached.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of priority of U.S. ProvisionalApplication Ser. No. 60/747,768, filed May 19, 2006, and is acontinuation-in-part of U.S. application Ser. No. 11/213,344, which isnow U.S. Publication No. 2007/0042675, filed Aug. 26, 2005, which claimspriority to U.S. Provisional Application Ser. No. 60/710,682, filed Aug.22, 2005.The disclosure of each prior application is considered part ofand is incorporated by reference in the disclosure of this application.

BACKGROUND

The present invention relates to generally to chemical mechanicalpolishing of substrates.

An integrated circuit is typically formed on a substrate by thesequential deposition of conductive, semiconductive, or insulativelayers on a silicon wafer. One fabrication step involves depositing afiller layer over a non-planar surface and planarizing the filler layer.For certain applications, the filler layer is planarized until the topsurface of a patterned layer is exposed. A conductive filler layer, forexample, can be deposited on a patterned insulative layer to fill thetrenches or holes in the insulative layer. After planarization, theportions of the conductive layer remaining between the raised pattern ofthe insulative layer form vias, plugs, and lines that provide conductivepaths between thin film circuits on the substrate. For otherapplications, such as oxide polishing, the filler layer is planarizeduntil a predetermined thickness is left over the non planar surface. Inaddition, planarization of the substrate surface is usually required forphotolithography.

Chemical mechanical polishing (CMP) is one accepted method ofplanarization. This planarization method typically requires that thesubstrate be mounted on a carrier or polishing head. The exposed surfaceof the substrate is typically placed against a rotating polishing diskpad or belt pad. The polishing pad can be either a standard pad or afixed abrasive pad. A standard pad has a durable roughened surface,whereas a fixed-abrasive pad has abrasive particles held in acontainment media. The carrier head provides a controllable load on thesubstrate to push it against the polishing pad. A polishing slurry istypically supplied to the surface of the polishing pad. The polishingslurry includes at least one chemically reactive agent and, if used witha standard polishing pad, abrasive particles.

One problem in CMP is determining whether the polishing process iscomplete, i.e., whether a substrate layer has been planarized to adesired flatness or thickness, or when a desired amount of material hasbeen removed. Overpolishing (removing too much) of a conductive layer orfilm leads to increased circuit resistance. On the other hand,underpolishing (removing too little) of a conductive layer leads toelectrical shorting. Variations in the initial thickness of thesubstrate layer, the slurry composition, the polishing pad condition,the relative speed between the polishing pad and the substrate, and theload on the substrate can cause variations in the material removal rate.These variations cause variations in the time needed to reach thepolishing endpoint. Therefore, the polishing endpoint cannot bedetermined merely as a function of polishing time.

SUMMARY

In one general aspect, a computer-implemented method is described. Themethod includes obtaining a first spectrum of reflected light from afirst zone on a substrate and a second spectrum from a second zone onthe substrate during a polishing sequence and comparing the firstspectrum and the second spectrum to a spectra library to determine afirst index for the first spectrum and a second index for the secondspectrum. Then, a third spectrum of reflected light from the first zoneand a fourth spectrum from the second zone are obtained at a differenttime during the polishing sequence and are compared to the library todetermine a third index for the first zone and a fourth index for thesecond zone. A polishing rate at the first zone is determined from thefirst index and the third index and a polishing rate at the second zoneis determined from the second index and the fourth index. Based on thefirst polishing rate, the second polishing rate, a first target relativethickness for the first zone and a second target relative thickness forthe second zone, an adjusted polishing rate for the second zone isdetermined, which would cause the second zone to be polished to thesecond target relative thickness at substantially the same time as thefirst zone is polished to the first target relative thickness.

In another embodiment, a method of monitoring a chemical mechanicalpolishing process is described. A multi-wavelength light beam isdirected onto a substrate undergoing polishing and measuring a spectrumof light reflected from the substrate. The light beam is caused to movein a path across the substrate surface. A sequence of spectralmeasurements are extracted from the signal and determining a radialposition on the substrate for each of the spectral measurements. Thespectral measurements are sorted into a plurality of radial rangesaccording to the radial positions. A polishing endpoint is determinedfor the substrate from the spectral measurements in at least one of theplurality of radial ranges.

Systems for performing the method steps described herein, including alight source, a detector and a controller are described. Computerprogram products are configured to perform at least some of the methodsteps.

Embodiments of the above mentioned methods and systems for performingthe above mentioned methods may include one or more of the followingfeatures. The first zone can be an inner zone and the second zone can bean outer annular zone. Determining an adjusted polishing rate for thesecond zone can include determining when the first target relativethickness will be within a predetermined threshold from the secondtarget relative thickness or determining an estimated endpoint time forthe polishing sequence. Obtaining the first spectrum and a secondspectrum can include obtaining white light spectra. A parameter of thepolishing system can be adjusted to cause the second zone to be polishedat the adjusted polishing rate. Determining the adjusted polishing ratecan be performed on a set-up substrate and the step of adjusting aparameter of the polishing system is performed on a product substrate orperformed on product substrate and the step of adjusting a parameter ofthe polishing system performed on the product substrate. Adjusting aparameter of the polishing system can include adjusting pressure.Determining an adjusted polishing rate can include determining a rate ofpolishing which causes a cross section along a diameter of the substrateto have a flat profile when the polishing sequence is completed.

Determining an adjusted polishing rate can include determining a rate ofpolishing which causes a cross section along a diameter of the substrateto have a bowl-like shape when the polishing sequence is completed.Obtaining the first spectrum and the second spectrum can includesampling the substrate at different rotational locations or measuringspectra reflected from an oxide layer. The method can include polishinga set up substrate until the set up substrate is overpolished, obtaininga plurality of spectra from a single zone of the test substrate duringthe polishing and storing the plurality of spectra in combination with atime at which each spectrum was obtained to create the spectra library.The method can include creating indexes for the spectra library, whereinan index represents a spectrum obtained from the set up substrate at aspecified time. The method can include determining an adjusted polishingrate for one of the radial ranges and applying the adjusted polishingrate to the one of the radial ranges.

The details of one or more embodiments of the invention are set forth inthe accompanying drawings and the description below. Other features,objects, and advantages of the invention will be apparent from thedescription and drawings, and from the claims.

DESCRIPTION OF DRAWINGS

FIG. 1 shows a chemical mechanical polishing apparatus.

FIGS. 2A-2H show implementations of a polishing pad window.

FIG. 3 shows an implementation of a flushing system.

FIG. 4 shows an alternative implementation of the flushing system.

FIG. 5 is an overhead view of a polishing pad and shows locations wherein situ measurements are taken.

FIG. 6A shows a spectrum obtained from in situ measurements.

FIG. 6B illustrates the evolution of spectra obtained from in situmeasurements as polishing progresses.

FIG. 7A shows a method for obtaining a target spectrum.

FIG. 7B shows a method for obtaining a reference spectrum.

FIGS. 8A and 8B show a method for endpoint determination.

FIGS. 9A and 9B show an alternative method for endpoint determination.

FIGS. 10A and 10B show another alternative method for endpointdetermination.

FIG. 11 shows an implementation for determining an endpoint.

FIG. 12 illustrates peak to trough normalization of a spectrum.

FIG. 13 shows a method for obtaining spectra within zones duringpolishing.

FIG. 14 shows a method for adjusting the polishing rate in zones toachieve a desired profile.

FIG. 15 shows a graph of the polishing progress (e.g., material removedor material remaining, as characterized by an index) versus time (ascharacterized by the number of platen rotations).

FIG. 16 shows a graph of the polishing progress versus time for aprocess in which the polishing rates are adjusted.

FIG. 17 shows a graph of the polishing progress versus time for aprocess in which the polishing rates are not adjusted.

FIG. 18 shows a graph of the polishing versus time for a process thatuses a feed forward method of controlling polishing.

Like reference symbols in the various drawings indicate like elements.

DETAILED DESCRIPTION

FIG. 1 shows a polishing apparatus 20 operable to polish a substrate 10.The polishing apparatus 20 includes a rotatable disk-shaped platen 24,on which a polishing pad 30 is situated. The platen is operable torotate about axis 25. For example, a motor can turn a drive shaft 22 torotate the platen 24. The polishing pad 30 can be detachably secured tothe platen 24, for example, by a layer of adhesive. When worn, thepolishing pad 30 can be detached and replaced. The polishing pad 30 canbe a two-layer polishing pad with an outer polishing layer 32 and asofter backing layer 34.

Optical access 36 through the polishing pad is provided by including anaperture (i.e., a hole that runs through the pad) or a solid window. Thesolid window can be secured to the polishing pad, although in someimplementations the solid window can be supported on the platen 24 andproject into an aperture in the polishing pad. The polishing pad 30 isusually placed on the platen 24 so that the aperture or window overliesan optical head 53 situated in a recess 26 of the platen 24. The opticalhead 53 consequently has optical access through the aperture or windowto a substrate being polished. The optical head is further describedbelow.

The window can be, for example, a rigid crystalline or glassy material,e.g., quartz or glass, or a softer plastic material, e.g., silicone,polyurethane or a halogenated polymer (e.g., a fluoropolymer), or acombination of the materials mentioned. The window can be transparent towhite light. If a top surface of the solid window is a rigid crystallineor glassy material, then the top surface should be sufficiently recessedfrom the polishing surface to prevent scratching. If the top surface isnear and may come into contact with the polishing surface, then the topsurface of the window should be a softer plastic material. In someimplementations the solid window is secured in the polishing pad and isa polyurethane window, or a window having a combination of quartz andpolyurethane. The window can have high transmittance, for example,approximately 80% transmittance, for monochromatic light of a particularcolor, for example, blue light or red light. The window can be sealed tothe polishing pad 30 so that liquid does not leak through an interfaceof the window and the polishing pad 30.

In one implementation, the window includes a rigid crystalline or glassymaterial covered with an outer layer of a softer plastic material. Thetop surface of the softer material can be coplanar with the polishingsurface. The bottom surface of the rigid material can be coplanar withor recessed relative to the bottom surface of the polishing pad. Inparticular, if the polishing pad includes two layers, the solid windowcan be integrated into the polishing layer, and the bottom layer canhave an aperture aligned with the solid window.

Assuming that the window includes a combination of a rigid crystallineor glassy material and a softer plastic material, no adhesive need beused to secure the two portions. For example, in one implementation, noadhesive is used to couple the polyurethane portion to the quartzportion of the window. Alternatively, an adhesive that is transparent towhite light can be used or an adhesive can be applied so that lightpassing through the window does not pass through the adhesive. By way ofexample, the adhesive can be applied only to the perimeter of theinterface between the polyurethane and quartz portion. A refractiveindex gel can be applied to a bottom surface of the window.

A bottom surface of the window can optionally include one or morerecesses. A recess can be shaped to accommodate, for example, an end ofan optical fiber cable or an end of an eddy current sensor. The recessallows the end of the optical fiber cable or the end of the eddy currentsensor to be situated at a distance, from a substrate surface beingpolished, that is less than a thickness of the window. With animplementation in which the window includes a rigid crystalline portionor glass like portion and the recess is formed in such a portion bymachining, the recess is polished so as to remove scratches caused bythe machining. Alternatively, a solvent and/or a liquid polymer can beapplied to the surfaces of the recess to remove scratches caused bymachining. The removal of scratches usually caused by machining reducesscattering and can improve the transmittance of light through thewindow.

FIG. 2A-2H show various implementations of the window. As shown in FIG.2A, the window can have two portions, a polyurethane portion 202 and aquartz portion 204. The portions are layers, with the polyurethaneportion 202 situated on top of the quartz portion 204. The window can besituated in the polishing pad so that the top surface 206 of thepolyurethane layer is coplanar with a polishing surface 208 of thepolishing pad.

As shown in FIG. 2B, the polyurethane portion 202 can have a recess inwhich the quartz portion is situated. A bottom surface 210 of the quartzportion is exposed.

As shown in FIG. 2C, the polyurethane portion 202 can includeprojections, for example, projection 212, that project into the quartzportion 204. The projections can act to reduce the likelihood that thepolyurethane portion 202 will be pulled away from the quartz portion 204due to friction from the substrate or retaining ring.

As shown in FIG. 2D, the interface between the polyurethane portion 202and quartz portion 204 can be a rough surface. Such a surface canimprove the strength of the coupling of the two portions of the window,also reducing the likelihood the polyurethane portion 202 will be pulledaway from the quartz portion 204 due to friction from the substrate orretaining ring.

As shown in FIG. 2E, the polyurethane portion 202 can have non uniformthickness. The thickness at a location that would be in the path 214 ofa light beam is less than the thickness at a location that would not bein the path 214 of the light beam. By way of example, thickness t₁ isless than thickness t₂. Alternatively, the thickness can be less at theedges of the window.

As shown in FIG. 2F, the polyurethane portion 202 can be attached to thequartz portion 204 by use of an adhesive 216. The adhesive can beapplied so that it would not be in the path 214 of the light beam.

As shown in FIG. 2G, the polishing pad can include a polishing layer anda backing layer. The polyurethane portion 202 extends through thepolishing layer and at least partially into the backing layer. The holein the backing layer can be larger in size than the hole in thepolishing layer, and the section of the polyurethane in the backinglayer can be wider than the section of the polyurethane in the polishinglayer. The polishing layer thus provides a lip 218 which overhangs thewindow and which can act to resist a pulling of the polyurethane portion202 away from the quartz portion 204. The polyurethane portion 202conforms to the holes of the layers of the polishing pad.

As shown in FIG. 2H, refractive index gel 220 can be applied to thebottom surface 210 of the quartz portion 204 so as to provide a mediumfor light to travel from a fiber cable 222 to the window. The refractiveindex gel 220 can fill the volume between the fiber cable 222 and thequartz portion 204 and can have a refractive index that matches or isbetween the indices of refraction of the fiber cable 222 and the quartzportion 204.

In implementations where the window includes both quartz andpolyurethane portions, the polyurethane portion should have a thicknessso that, during the life time of the polishing pad, the polyurethaneportion will not be worn so as to expose the quartz portion. The quartzcan be recessed from the bottom surface of the polishing pad, and thefiber cable 222 can extend partially into the polishing pad.

The above described window and polishing pad can be manufactured using avariety of techniques. The polishing pad's backing layer 34 can beattached to its outer polishing layer 32, for example, by adhesive. Theaperture that provides optical access 36 can be formed in the pad 30,e.g., by cutting or by molding the pad 30 to include the aperture, andthe window can be inserted into the aperture and secured to the pad 30,e.g., by an adhesive. Alternatively, a liquid precursor of the windowcan be dispensed into the aperture in the pad 30 and cured to form thewindow. Alternatively, a solid transparent element, e.g., the abovedescribed crystalline or glass like portion, can be positioned in liquidpad material, and the liquid pad material can be cured to form the pad30 around the transparent element. In either of the later two cases, ablock of pad material can be formed, and a layer of polishing pad withthe molded window can be scythed from the block.

With an implementation in which the window includes a crystalline orglass like first portion and a second portion made of soft plasticmaterial, the second portion can be formed in the aperture of the pad 30by applying the described liquid precursor technique. The first portioncan then be inserted. If the first portion is inserted before the liquidprecursor of the second portion is cured, then curing can bond the firstand second portions. If the first portion is inserted after the liquidprecursor is cured, then the first and second potions can be secured byusing an adhesive.

The polishing apparatus 20 can include a flushing system to improvelight transmission through the optical access 36. There are differentimplementations of the flushing system. With implementations of thepolishing apparatus 20 in which the polishing pad 30 includes anaperture instead of a solid window, the flushing system is implementedto provide a laminar flow of a fluid, e.g., a gas or liquid, across atop surface of the optical head 53. (The top surface can be a topsurface of a lens included in the optical head 53.) The laminar flow offluid across the top surface of the optical head 53 can sweep opaqueslurry out of the optical access and/or prevent slurry from drying onthe top surface and, consequently, improves transmission through theoptical access. With implementations in which the polishing pad 30includes a solid window instead of an aperture, the flushing system isimplemented to direct a flow of gas at a bottom surface of the window.The flow of gas can prevent condensation from forming at the solidwindow's bottom surface which would otherwise impede optical access.

FIG. 3 shows an implementation of the laminar flow flushing system. Theflushing system includes a gas source 302, a delivery line 304, adelivery nozzle 306, a suction nozzle 308, a vacuum line 310, and avacuum source 312. The gas source 302 and vacuum source can beconfigured so that they can introduce and suction a same or a similarvolume of gas. The delivery nozzle 306 is situated so that the laminarflow of gas is directed across the transparent top surface 314 of the insitu monitoring module and not directed at the substrate surface beingpolished. Consequently, the laminar flow of gas does not dry out slurryon a substrate surface being polished, which can undesirably affectpolishing.

FIG. 4 shows an implementation of the flushing system for preventing theformation of condensation on a bottom surface of the solid window. Thesystem reduces or prevents the formation of condensation at the bottomsurface of the polishing pad window. The system includes a gas source402, a delivery line 404, a delivery nozzle 406, a suction nozzle 408, avacuum line 410, and a vacuum source 412. The gas source 402 and vacuumsource can be configured so that they can introduce and suction a sameor a similar volume of gas. The delivery nozzle 406 is situated so thatthe flow of gas is directed at the bottom surface window in thepolishing pad 30.

In one implementation that is an alternative to the implementation ofFIG. 4, the flushing system does not include a vacuum source or line. Inlieu of these components, the flushing system includes a vent formed inthe platen so that the gas introduced into the space underneath thesolid window can be exhausted to a side of the platen or, alternatively,to any other location in the polishing apparatus that can toleratemoisture.

The above described gas source and vacuum source can be located awayfrom the platen so that they do not rotate with the platen. In thiscase, a rotational coupler for convey gas is included each of the supplyline and the vacuum line.

Returning to FIG. 1, the polishing apparatus 20 includes a combinedslurry/rinse arm 39. During polishing, the arm 39 is operable todispense slurry 38 containing a liquid and a pH adjuster. Alternative,the polishing apparatus includes a slurry port operable to dispenseslurry onto polishing pad 30.

The polishing apparatus 20 includes a carrier head 70 operable to holdthe substrate 10 against the polishing pad 30. The carrier head 70 issuspended from a support structure 72, for example, a carousel, and isconnected by a carrier drive shaft 74 to a carrier head rotation motor76 so that the carrier head can rotate about an axis 71. In addition,the carrier head 70 can oscillate laterally in a radial slot formed inthe support structure 72. In operation, the platen is rotated about itscentral axis 25, and the carrier head is rotated about its central axis71 and translated laterally across the top surface of the polishing pad.

The polishing apparatus also includes an optical monitoring system,which can be used to determine a polishing endpoint as discussed below.The optical monitoring system includes a light source 51 and a lightdetector 52. Light passes from the light source 51, through the opticalaccess 36 in the polishing pad 30, impinges and is reflected from thesubstrate 10 back through the optical access 36, and travels to thelight detector 52.

A bifurcated optical cable 54 can be used to transmit the light from thelight source 51 to the optical access 36 and back from the opticalaccess 36 to the light detector 52. The bifurcated optical cable 54 caninclude a “trunk” 55 and two “branches” 56 and 58.

As mentioned above, the platen 24 includes the recess 26, in which theoptical head 53 is situated. The optical head 53 holds one end of thetrunk 55 of the bifurcated fiber cable 54, which is configured to conveylight to and from a substrate surface being polished. The optical head53 can include one or more lenses or a window overlying the end of thebifurcated fiber cable 54 (e.g., as shown in FIG. 3). Alternatively, theoptical head 53 can merely hold the end of the trunk 55 adjacent thesolid window in the polishing pad. The optical head 53 can hold theabove described nozzles of the flushing system. The optical head 53 canbe removed from the recess 26 as required, for example, to effectpreventive or corrective maintenance.

The platen includes a removable in-situ monitoring module 50. The insitu monitoring module 50 can include one or more of the following: thelight source 51, the light detector 52, and circuitry for sending andreceiving signals to and from the light source 51 and light detector 52.For example, the output of the detector 52 can be a digital electronicsignal that passes through a rotary coupler, e.g., a slip ring, in thedrive shaft 22 to the controller for the optical monitoring system.Similarly, the light source can be turned on or off in response tocontrol commands in digital electronic signals that pass from thecontroller through the rotary coupler to the module 50.

The in-situ monitoring module can also hold the respective ends of thebranch portions 56 and 58 of the bifurcated optical fiber 54. The lightsource is operable to transmit light, which is conveyed through thebranch 56 and out the end of the trunk 55 located in the optical head53, and which impinges on a substrate being polished. Light reflectedfrom the substrate is received at the end of the trunk 55 located in theoptical head 53 and conveyed through the branch 58 to the light detector52.

In one implementation, the bifurcated fiber cable 54 is a bundle ofoptical fibers. The bundle includes a first group of optical fibers anda second group of optical fibers. An optical fiber in the first group isconnected to convey light from the light source 51 to a substratesurface being polished. An optical fiber in the second group isconnected to received light reflecting from the substrate surface beingpolished and convey the received light to a light detector. The opticalfibers can be arranged so that the optical fibers in the second groupform an X like shape that is centered on the longitudinal axis of thebifurcated optical fiber 54 (as viewed in a cross section of thebifurcated fiber cable 54). Alternatively, other arrangements can beimplemented. For example, the optical fibers in the second group canform V like shapes that are mirror images of each other. A suitablebifurcated optical fiber is available from Verity Instruments, Inc. ofCarrollton, Tex.

There is usually an optimal distance between the polishing pad windowand the end of the trunk 55 of bifurcated fiber cable 54 proximate tothe polishing pad window. The distance can be empirically determined andis affected by, for example, the reflectivity of the window, the shapeof the light beam emitted from the bifurcated fiber cable, and thedistance to the substrate being monitored. In one implementation, thebifurcated fiber cable is situated so that the end proximate to thewindow is as close as possible to the bottom of the window withoutactually touching the window. With this implementation, the polishingapparatus 20 can include a mechanism, e.g., as part of the optical head53, that is operable to adjust the distance between the end of thebifurcated fiber cable 54 and the bottom surface of the polishing padwindow. Alternatively, the proximate end of the bifurcated fiber cableis embedded in the window.

The light source 51 is operable to emit white light. In oneimplementation, the white light emitted includes light havingwavelengths of 200-800 nanometers. A suitable light source is a xenonlamp or a xenon mercury lamp.

The light detector 52 can be a spectrometer. A spectrometer is basicallyan optical instrument for measuring properties of light, for example,intensity, over a portion of the electromagnetic spectrum. A suitablespectrometer is a grating spectrometer. Typical output for aspectrometer is the intensity of the light as a function of wavelength.

Optionally, the in-situ monitoring module 50 can include other sensorelements. The in-situ monitoring module 50 can include, for example,eddy current sensors, lasers, light emitting diodes, and photodetectors.With implementations in which the in situ monitoring module 50 includeseddy current sensors, the module 50 is usually situated so that asubstrate being polished is within working range of the eddy currentsensors.

The light source 51 and light detector 52 are connected to a computingdevice operable to control their operation and to receive their signals.The computing device can include a microprocessor situated near thepolishing apparatus, e.g., a personal computer. With respect to control,the computing device can, for example, synchronize activation of thelight source 51 with the rotation of the platen 24. As shown in FIG. 5,the computer can cause the light source 51 to emit a series of flashesstarting just before and ending just after the substrate 10 passes overthe in situ monitoring module. (Each of points 501-511 depictedrepresents a location where light from the in situ monitoring moduleimpinged and reflected off.) Alternatively, the computer can cause thelight source 51 to emit light continuously starting just before andending just after the substrate 10 passes over the in situ monitoringmodule.

With respect to receiving signals, the computing device can receive, forexample, a signal that carries information describing a spectrum of thelight received by the light detector 52. FIG. 6A shows examples of aspectrum measured from light that is emitted from a single flash of thelight source and that is reflected from the substrate. Spectrum 602 ismeasured from light reflected from a product substrate. Spectrum 604 ismeasured from light reflected from a base silicon substrate (which is awafer that has only a silicon layer). Spectrum 606 is from lightreceived by the optical head 53 when there is no substrate situated overthe optical head 53. Under this condition, referred to in the presentspecification as a dark condition, the received light is typicallyambient light.

The computing device can process the above described signal to determinean endpoint of a polishing step. Without being limited to any particulartheory, the spectra of light reflected from the substrate 10 evolve aspolishing progresses. FIG. 6B provides an example of the evolution aspolishing of a film of interest progresses. The different lines ofspectrum represent different times in the polishing. As can be seen,properties of the spectrum of the reflected light changes as a thicknessof the film changes, and particular spectrums are exhibited byparticular thicknesses of the film. The computing device can executelogic that determines, based on one or more of the spectra, when anendpoint has been reached. The one or more spectra on which an endpointdetermination is based can include a target spectrum, a referencespectrum, or both.

As used in the instant specification, a target spectrum refers to aspectrum exhibited by the white light reflecting from a film of interestwhen the film of interest has a target thickness. By way of example, atarget thickness can be 1, 2, or 3 microns. Alternatively, the targetthickness can be zero, for example, when the film of interest is clearedso that an underlying film is exposed.

FIG. 7A shows a method 700 for obtaining a target spectrum. Propertiesof a substrate with the same pattern as the product substrate aremeasured (step 702). The substrate which is measured is referred to inthe instant specification as a “set-up” substrate. The set-up substratecan simply be a substrate which is similar or the same to the productsubstrate, or the set-up substrate could be one substrate from a batch.The properties can include a pre-polished thickness of a film ofinterest at a particular location of interest on the substrate.Typically, the thicknesses at multiple locations are measured. Thelocations are usually selected so that a same type of die feature ismeasured for each location. Measurement can be performed at a metrologystation.

The set-up substrate is polished in accordance with a polishing step ofinterest and spectra of white light reflecting off a substrate surfacebeing polished are collected during polishing (step 704). Polishing andspectra collection can be performed at the above described polishingapparatus. Spectra are collected by the in situ monitoring system duringpolishing. The substrate is overpolished, i.e., polished past anestimated endpoint, so that the spectrum of the light that reflectedfrom the substrate when the target thickness is achieved can beobtained.

Properties of the overpolished substrate are measured (step 706). Theproperties include post polished thicknesses of the film of interest atthe particular location or locations used for the pre polishmeasurement.

The measured thicknesses and the collected spectra are used to select,from among the collected spectra, a spectrum determined to be exhibitedby a thickness of interest (step 708). In particular, linearinterpolation can be performed using the measured pre polish filmthickness and post polish substrate thicknesses to determine which ofthe spectra was exhibited when the target film thickness was achieved.The spectrum determined to be the one exhibited when the targetthickness was achieved is designated to be the target spectrum for thebatch of substrates.

Optionally, the spectra collected are processed to enhance accuracyand/or precision. The spectra can be processed, for example: tonormalize them to a common reference, to average them, and/or to filternoise from them. Particular implementations of these processingoperations are described below.

As used in the instant specification, a reference spectrum refers to aspectrum that is associated with a target film thickness. A referencespectrum is usually empirically selected for particular endpointdetermination logic so that the target thickness is achieved when thecomputer device calls endpoint by applying the particular spectrum basedendpoint logic. The reference spectrum can be iteratively selected, aswill be described below in reference to FIG. 7B. The reference spectrumis usually not the target spectrum. Rather, the reference spectrum isusually the spectrum of the light reflected from the substrate when thefilm of interest has a thickness greater than the target thickness.

FIG. 7B shows a method 701 for selecting a reference spectrum for aparticular target thickness and particular spectrum based endpointdetermination logic. A set up substrate is measured and polished asdescribed above in steps 702 706 (step 703). In particular, spectracollected and the time at which each collected spectrum is measured isstored.

A polishing rate of the polishing apparatus for the particular set-upsubstrate is calculated (step 705). The average polishing rate PR can becalculated by using the pre and post polished thicknesses T₁, T₂, andthe actual polish time, PT, e.g., PR=(T₂−T₁)/PT.

An endpoint time is calculated for the particular set-up substrate toprovide a calibration point to test the reference spectrum, as discussedbelow (step 707). The endpoint time can be calculated based on thecalculated polish rate PR, the pre polish starting thickness of the filmof interest, ST, and the target thickness of the film of interest, TT.The endpoint time can be calculated as a simple linear interpolation,assuming that the polishing rate is constant through the polishingprocess, e.g., ET=(ST−TT)/PR.

Optionally, the calculated endpoint time can be evaluated by polishinganother substrate of the batch of patterned substrates, stoppingpolishing at the calculated endpoint time, and measuring the thicknessof the film of interest. If the thickness is within a satisfactory rangeof the target thickness, then the calculated endpoint time issatisfactory. Otherwise, the calculated endpoint time can bere-calculated.

One of the collected spectra is selected and designated to be thereference spectrum (step 709). The spectrum selected is a spectrum oflight reflected from the substrate when the film of interest has athickness greater than and is approximately equal to the targetthickness.

The particular endpoint determination logic is executed in simulationusing the spectra collected for the set-up substrate and with theselected spectrum designated to be the reference spectrum (step 711).Execution of the logic yields an empirically derived but simulatedendpoint time that the logic has determined to be the endpoint.

The empirically derived but simulated endpoint time is compared to thecalculated endpoint time (step 713). If the empirically derived endpointtime is within a threshold range of the calculated endpoint time, thenthe currently selected reference spectrum is known to generate a resultthat matches the calibration point. Thus, when the endpoint logic isexecuted using the reference spectrum in a run-time environment, thesystem should reliably detect an endpoint at the target thickness.Therefore, the reference spectrum can be kept as the reference spectrumfor run time polishing of the other substrates of the batch (step 715).Otherwise, steps 709 and 711 are repeated as appropriate.

Optionally, variables other than the selected spectrum can be changedfor each iteration (i.e., each performance of steps 709 and 711). Forexample, the above mentioned processing of the spectra (for example,filter parameters) and/or a threshold range from a minimum of adifference trace can be changed. The difference trace and the thresholdrange of a minimum of the difference trace are described below.

FIG. 8A shows a method 800 for using spectrum based endpointdetermination logic to determine an endpoint of a polishing step.Another substrate of the batch of patterned substrates is polished usingthe above described polishing apparatus (step 802). At each revolutionof the platen, the following steps are performed.

One or more spectra of white light reflecting off a substrate surfacebeing polished are measured to obtain one or more current spectra for acurrent platen revolution (step 804). The one or more spectra measuredfor the current platen revolution are optionally processed to enhanceaccuracy and/or precision as described above in reference to FIG. 7A andas described below in reference to FIG. 11. If only one spectrum ismeasured, then the one spectrum is used as the current spectrum. If morethan one current spectra is measured for a platen revolution, then theyare grouped, averaged within each group, and the averages are designatedto be current spectra. The spectra can be grouped by radial distancefrom the center of the substrate. By way of example, a first currentspectrum can be obtained from spectra measured as points 502 and 510(FIG. 5), a second current spectrum can be obtained from spectrameasured at points 503 and 509, a third current spectra can be obtainedfrom spectra measured at points 504 and 508, and so forth. The spectrameasured at points 502 and 510 are averaged to obtain a first currentspectrum for the current platen revolution. The spectra measured atpoints 503 and 509 are averaged to obtain a second current spectrum forthe current platen revolution. The spectra measured at points 504 and508 are averaged to obtain a third current spectrum for the currentplaten revolution.

A difference between the one or more current spectra and a referencespectrum is calculated (step 806). The reference spectrum can beobtained as described above in reference to FIG. 7B. In oneimplementation, the difference is a sum of differences in intensitiesover a range of wavelengths. That is,

${Difference} = {\sum\limits_{\lambda = a}^{b}{{abs}\;( {{I_{current}(\lambda)} - {I_{reference}(\lambda)}} )}}$

where a and b are the lower limit and upper limit of the range ofwavelengths of a spectrum, respectively, and I_(current)(λ) andI_(reference)(λ) are the intensity of a current spectra and theintensity of the target spectra for a given wavelength, respectively.

Each calculated difference is appended to a difference trace (step 808).The difference trace is generally a plot of the calculated difference.The difference trace is updated at least once per platen revolution.(When multiple current spectra are obtained for each platen revolution,the difference trace can be updated more than once per platenrevolution.)

Optionally, the difference trace can be processed, for example,smoothing the difference trace by filtering out a calculated differencethat deviates beyond a threshold from preceding one or more calculateddifferences.

Whether the difference trace is within a threshold value of a minimum isdetermined (step 810). After the minimum has been detected, the endpointis called when the different trace begins to rise past a particularthreshold value of the minimum. Alternatively, the endpoint can becalled based on the slope of the difference trace. In particular, theslope of the difference trace approaches and becomes zero at the minimumof the difference trace. The endpoint can be called when the slope ofthe difference trace is within a threshold range of the slope that isnear zero.

Optionally, window logic can be applied to facilitate the determinationof step 808. Window logic suitable for use is described in commonlyassigned U.S. Pat. Nos. 5,893,796 and 6,296,548, which are incorporatedby reference.

If the difference trace is NOT determined to have reached a thresholdrange of a minimum, polishing is allowed to continue and steps 804, 806,808, and 810 are repeated as appropriate. Otherwise, an endpoint iscalled and polishing is stopped (step 812).

FIG. 8B illustrates the above described method for determining endpoint.Trace 801 is the raw difference trace. Trace 803 is the smootheddifference trace. Endpoint is called when the smoothed difference trace803 reaches a threshold value 805 above the minimum 807.

As an alternative to using a reference spectrum, a target spectrum canbe used in the method 800. The difference calculation would be between acurrent spectrum and the target spectrum, and endpoint would bedetermined when the difference trace reaches a minimum.

FIG. 9A shows an alterative method 900 for using a spectrum basedendpoint determination logic to determine an endpoint of a polishingstep. A set-up substrate is polished and a target spectrum and referencespectrum are obtained (step 902). These spectra can be obtained asdescribed above in reference to FIGS. 7A and 7B.

A target difference is calculated (step 904). The target difference isthe difference between the reference spectrum and the target spectrumand can be calculated using the above described difference equation.

Polishing of another substrate of the batch of substrates is started(step 906). The following steps are performed for each platen revolutionduring polishing. One or more spectra of white light reflecting off asubstrate surface being polished are measured to obtain one or morecurrent spectra for a current platen revolution (step 908). A differencebetween the current one or more spectra and the reference spectrum iscalculated (step 910). The calculated difference or differences (ifthere are more than one current spectrum) are appended to a differencetrace (step 912). Whether the difference trace is within a thresholdrange of the target difference is determined (step 914). If thedifference trace is NOT determined to have reached a threshold range ofthe target difference, polishing is allowed to continue and steps 908,910, 912, and 914 are repeated as appropriate. Otherwise, an endpoint iscalled and polishing is stopped (step 916).

FIG. 9B illustrates the above described method for determining endpoint.Trace 901 is the raw difference trace. Trace 903 is the smootheddifference trace. Endpoint is called when the smooth difference trace903 is within a threshold range 905 of a target difference 907.

FIG. 10A shows another method 1000 for determining an endpoint of apolishing step. A reference spectrum is obtained (step 1002). Thereference spectrum is obtained as described above in reference to FIG.7B.

The spectra collected from the process of obtaining the referencespectrum are stored in a library (step 1004). Alternatively, the librarycan include spectra that are not collected but theoretically generated.The spectra, including the reference spectrum, are indexed so that eachspectrum has a unique index value. The library can be implemented inmemory of the computing device of the polishing apparatus.

A substrate from the batch of substrates is polished, and the followingsteps are performed for each platen revolution. One or more spectra aremeasured to obtain a current spectra for a current platen revolution(step 1006). The spectra are obtained as described above. The spectrastored in the library which best fits the current spectra is determined(step 1008). The index of the library spectrum determined to best fitsthe current spectra is appended to an endpoint index trace (step 1010).Endpoint is called when the endpoint trace reaches the index of thereference spectrum (step 1012).

FIG. 10B illustrates the above described method for determiningendpoint. Trace 1014 is the raw index trace. Trace 1016 is the smootheddifference trace. Line 1018 represents the index value of the referencespectrum. Multiple current spectra can be obtained in each sweep of theoptical head beneath the substrate, e.g., a spectra for each radial zoneon the substrate being tracked, and an index trace can be generated foreach radial zone.

FIG. 11 shows an implementation for determining an endpoint during apolishing step. For each platen revolution, the following steps areperformed. Multiple raw spectra of white light reflecting off asubstrate surface being polished are measured (step 1102).

Each measured raw spectra is normalized to remove light reflectionscontributed by mediums other than the film or films of interest (step1104). Normalization of spectra facilitates their comparison to eachother. Light reflections contributed by media other than the film orfilms of interest include light reflections from the polishing padwindow and from the base silicon layer of the substrate. Contributionsfrom the window can be estimated by measuring the spectrum of lightreceived by the in situ monitoring system under a dark condition (i.e.,when no substrates are placed over the in situ monitoring system).Contributions from the silicon layer can be estimated by measuring thespectrum of light reflecting of a bare silicon substrate. Thecontributions are usually obtained prior to commencement of thepolishing step.

A measured raw spectrum is normalized as follows:normalized spectrum=(A−Dark)/(Si−Dark)where A is the raw spectrum, Dark is the spectrum obtained under thedark condition, and Si is the spectrum obtained from the bare siliconsubstrate.

Optionally, the collected spectra can be sorted based on the region ofthe pattern that has generated the spectrum, and spectra from someregions can be excluded from the endpoint calculation. In particular,spectra that are from light reflecting off scribe lines can be removedfrom consideration (step 1106). Different regions of a pattern substrateusually yield different spectra (even when the spectra were obtained ata same point of time during polishing). For example, a spectrum of thelight reflecting off a scribe line in a substrate is different from thespectrum of the light reflecting off an array of the substrate. Becauseof their different shapes, use of spectra from both regions of thepattern usually introduces error into the endpoint determination.However, the spectra can be sorted based on their shapes into a groupfor scribe lines and a group for arrays. Because there is often greatervariation in the spectra for scribe lines, usually these spectra can beexcluded from consideration to enhance precision.

A subset of the spectra processed thus far is selected and averaged(step 1108). The subset consists of the spectra obtained from lightreflecting off the substrate at points of a region on the substrate. Theregion can be, for example, region 512 or region 413 (FIG. 5).

Optionally, a high pass filter is applied to the measured raw spectra(step 1110). Application of the high pass filter typically removes lowfrequency distortion of the average of the subset of spectra. The highpass filter can be applied to the raw spectra, their average, or to boththe raw spectra and their average.

The average is normalized so that its amplitude is the same or similarto the amplitude of the reference spectrum (step 1112). The amplitude ofa spectrum is the peak to trough value of the spectrum. Alternatively,the average is normalized so that its reference spectrum is the same orsimilar to a reference amplitude to which the reference spectrum hasalso been normalized.

A difference between the normalized average and a reference spectrum iscalculated (step 1114). The reference spectrum is obtained as describedin reference to FIG. 7B. The difference is calculated using the abovedescribed equation for calculating differences between spectra.

A difference trace is updated with the current difference (step 1116).The difference trace exhibits calculated differences between normalizedaverages and the reference spectrum as a function of time (or platenrevolution).

A median and low pass filter is applied to the updated difference trace(step 1118). Application of these filters typically smoothes the trace(by reducing or eliminating spikes in the trace).

Endpoint determination is performed based on the updated and filtereddifference trace (step 1120). The determination is made based on whenthe difference trace reaches a minimum. The above described window logicis used to make the determination.

More generally, the signal processing steps of steps 1104-1112 can beused to improve endpoint determination procedures. For example, insteadof generation of a difference trace, the normalized average spectracould be used to select a spectra from a library to generate an indextrace, as described above in reference to FIG. 10A.

FIG. 12 illustrates the normalization of step 1112. As can be seen, onlya portion of a spectrum (or an average of spectra) is considered fornormalization. The portion considered is referred to in the instantspecification as a normalization range and, furthermore, can be userselectable. Normalization is effected so that the highest point and thelowest point in the normalization range are normalized to 1 and 0,respectively. The normalization is calculated as follows:g=(1−0)/(r _(max) −r _(min))h=1−r _(max) ·gN=R g+hwhere, g is a gain, h is an offset, r_(max) is the highest value in thenormalization range, r_(min) is the lowest value in the normalizationrange, N is the normalized spectrum, and R is the pre normalizedspectrum.

FIG. 13 shows a method 1200 for using spectra to achieve a desiredsubstrate profile. An expected endpoint time for polishing a productsubstrate is determined (step 1210). In some implementations, theexpected endpoint time is determined by polishing a set-up substratewith predetermined process parameters, determining when the set-upsubstrate reaches a desired thickness (e.g., by conventional off-linemetrology measurements) and using the polishing time at which the set-upsubstrate reaches the desired thickness as the expected endpoint time.

Product substrate polishing commences (step 1218). A spectrum isobtained at more than one radial position of the substrate (step 1226).For each spectra measurement, the radial position on the substrate canbe determined, and the spectra measurements can be binned into zonesbased on their radial positions. A substrate can have multiple zones,such as a center zone, a middle zone and an edge zone. On a 300 mmwafer, the center zone can extend from the center to a radius of 50 mm,the middle zone can extend from a radius of 50 mm to about 100 mm andthe edge can extend from about 100 mm to about 150 mm. In someimplementations, the substrate has more or fewer zones that the threementioned. The position from which the spectra is obtained can bedetermined, such as by using the method described in U.S. PublicationNo. 2007/0224915, filed Aug. 18, 2004, “Determination of Position ofSensor Measurements During Polishing” or as described in U.S. Pat. No.7,018,271, incorporated herein by reference for all purposes.

The spectra from each zone (or, for each zone, an average of spectrafrom within the zone obtained from a single sweep of the sensor acrossthe substrate) are compared to the spectra in the spectra library, asdescribed above with respect to FIG. 10A (step 1234). The correspondingindex number is determined for each zone from the comparison with thespectra library (step 1238).

Polishing is stopped when the indexes for the zones meet one or moreendpoint criteria. For example, polishing can be stopped when a desiredindex is reached for a preselected zone, or when any of the zones firstreaches a desired index, or when desired indexes are achieved for everyzone (step 1244). The desired index for each zone is determined by thefinal desired profile for the substrate. If the substrate is to have aflat profile or a uniform layer of oxide when polishing is completed,then spectra obtained at each zone should be the same or approximatelythe same and each zone would have the same or similar desired indexnumber.

The polishing rates in the zones can be adjusted using a feedback loopso that the final index number in each zone is equal to the desiredfinal index number. FIG. 14 shows one method 1300 for adjusting thepolishing process to achieve the desired substrate profile at theexpected endpoint time. The desired index number at the expectedendpoint time is determined for each zone on the substrate (step 1302).Polishing commences (step 1304) and the substrate is optically monitoredas described above so that an index trace is determined for each zone onthe substrate (step 1306). After an initial delay time, which allows thepolishing process to stabilize, the rate of change of the indexaccording to time is calculated (number of platen rotations may be usedas representative of the time) (step 1308). The rate of change of theindex may be calculated simply as a difference in indexes at twodifferent times divided by the number of elapsed platen rotationsbetween the spectra measurements that generated the indexes at thedifferent times. The rate of change in the index number indicates thepolishing rate. Typically, if none of the polishing parameters arechanged, the polishing rate can be assumed to be steady.

The rate of change of the index for each zone is used to extrapolate theindex trace to determine the index number that will be achieved at theexpected endpoint time for the associated zone (step 1312). If at theexpected endpoint time, the desired index number will be passed or willnot yet been reached, the polishing rate can be adjusted upwardly ordownwardly, as required (step 1320). If the desired index number isreached at the expected endpoint time, no adjustment may be required.More than one extrapolation and determination of whether an adjustmentshould be made can occur over the polishing sequence. Determiningwhether an adjustment in the polishing rate needs to be made can includedetermining whether the desired index number will be achieved when thepolishing endpoint occurs or determining that the final index fallswithin an acceptable range from the desired final index number.

In some implementations, the expected endpoint time is determined forone zone, such as the center zone. The polishing rates within the otherzones are then adjusted, if necessary, to achieve their desiredendpoints at the same time as the expected endpoint time for theselected zone, e.g., the center zone. The polishing rates can beadjusted, such as by increasing or decreasing the pressure in acorresponding zone in the carrier head. In some carrier heads, such asthe carrier head described in U.S. Publication No. 2005-0211377, thecarrier head has adjustable pressure zones. The change in polishing ratecan be assumed to be directly proportional to the change in pressure,e.g., a simple Prestonian model. Additionally, a control model forpolishing the substrates can be developed that takes into account theinfluences of platen or head rotational speed, second order effects ofdifferent head pressure combinations, the polishing temperature, slurryflow, or other parameters that affect the polishing rate.

The spectrum based endpoint determination logic described above inmethod 800, can also be used to determine the polishing endpoint and canbe used in conjunction with adjusting the polishing process to achievethe desired substrate profile. The relative thickness for each zone isdetermined using the difference between the zones, from the equationprovided above with respect to step 806. As the substrate is polished,spectra are obtained and binned into zones. Optionally, signalprocessing and filtering is applied to the spectra. Asum-of-squared-difference calculation is applied to the collectedspectra for each zone and a predetermined reference spectrum. Thepredetermined reference spectrum is the spectrum that is obtained whenthe polishing endpoint has been reached.

When the sum-of-squared-difference with the reference spectrumapproaches a minimum in one zone, the polishing pressures for the otherzones are examined to determine if the polishing rates at any of thezones should altered. The polishing rate at the zone where thesum-of-squared-difference is approaching a minimum can be reduced andthe polishing rates in the other zones can be increased. Thesum-of-squared-difference can also be analyzed throughout polishing sothat adjustments to the polishing rate can be altered earlier in thepolishing sequence. Unlike the method described in method 1300, thismethod does not require a correlation between the polishing spectra andindex numbers from a spectra library.

The polishing rate determinations described above can be graphicallydepicted. Referring to FIG. 15, the index corresponding to each spectracan be graphed as a function of the number of platen rotations. Here, aproduct substrate with a diameter of 300 mm was polished. The centerregion of the substrate is a circle that extends from the center toabout 40 mm in radius. The edge region is between about 90 mm from thecenter to about 130 mm from the center. Line 1410 is based on spectraobtained from the center region of the substrate. Line 1420 is based onspectra obtained from the edge region of the substrate. The y axiscorresponds to the index 1430, where the index numbers are between 0 and90. The x-axis corresponds to the number of rotations 1440 at which aspectrum is obtained. After about the first 20 rotations, the spectraobtained at the center and the edge are about the same. The polishingprocess then begins to stabilize. At the end of the polishing cycle, themeasured thickness of the substrate at the center is about 300 Angstromsgreater than at the edge. A particular spectra is obtained from the edgezone about 5 rotations later than the same spectra is obtained from thecenter zone. Here, the polishing rates are about equal, as can be seenfrom the polishing rates being parallel. Thus, the difference in thefinal polishing thickness (300 Angstroms) divided by the number ofrotations that the edge zone is ahead of the center zone (5 rotations)indicates the rate of polishing (about 60 Angstroms per rotation), oncethe polishing process stabilizes.

Referring to FIG. 16, if a particular profile is desired, such as auniform thickness across the surface of the substrate, the slope of thepolishing rate, as indicated by the change in index numbers according totime, can be monitored and the polishing rate adjusted. After apolishing stabilizing period 1505, a spectrum is obtained at the centerzone 1510, at the edge zone 1515 and in between at a middle zone 1520.Here, the zones are circular or annular zones. Each spectrum iscorrelated to its respective index. This process is repeated over anumber of platen rotations, or over time, and the polishing rate at eachof the center zone 1510, middle zone 1520 and edge zone 1515 isdetermined. The polishing rate is indicated by the slope of the linethat is obtained by plotting the index 1530 (y-axis) according to thenumber of rotations 1535 (x-axis). If any of the rates appears to befaster or slower than the others, the rate in the zone can be adjusted.Here, the adjustment is based on the endpoint C_(E) of the center zone1510. An approximate polish end point EDP is known from polishingsimilar substrates with similar polishing parameters or from using thedifference method described above. At a first polishing time T₁ duringthe polishing process, the rate of polishing at the middle zone 1520 isdecreased and the rate of polishing at the edge zone is increased.Without adjusting the polishing rate at the middle zone 1520, the middlezone would be polished faster than the rest of the substrate, beingpolished at an overpolish rate of M_(A). Without adjusting the polishingrate at T₁ for the edge zone 1515, the edge zone 1515 would beunderpolished at a rate of E_(u).

At a subsequent time (T₂) during the polishing process, the rates canagain be adjusted, if necessary. The goal in this polishing process isto end polishing when the substrate has a flat surface, or an oxidelayer across the surface that is relatively even. One way of determiningthe amount to adjust the rate of polishing is to adjust the rates sothat the index of each of the center, middle and edge zones are equal atthe approximate polish end point EDP. Thus, the polishing rate at theedge zone needs adjusting while the center and middle zones are polishedat the same rate as prior to T₂. If the EDP is approximate, polishingcan be stopped when the index at each zone is in the desired location,that is, when each location has the same index.

Another way of using the spectra-based observation of the polishingrates to achieve a particular profile is to polish a first substrate andmonitor the polishing rate and feed the polishing rate informationforward to subsequently polished substrates. Referring to FIG. 17, afirst set-up substrate is polished and spectra are obtained so that thepolishing rates and relative oxide thickness at the center 1610, middle1620 and edge zones 1630 are determined. The starting index for themiddle 1620, center 1610 and edge 1630 zones is M_(O), C_(O) and E_(O),respectively. The center zone 1610 has an endpoint C_(E) spectra that isselected to be the target spectra. If at the end of polishing the othertwo zones have an index number that is within a threshold distance 1640from the index of the center endpoint CE, no adjustments will be made tothe polishing rate of the edge 1630 or middle zones 1620. Similarly, ifthe polishing rate and the index numbers during polishing are within anacceptable margin 1650, no adjustment will need to be made to the edge1630 or middle zones 1620. Here, the endpoint for the middle zone M_(E)shows that the middle zone has been over-polished and the endpoint forthe edge zone E_(E) shows that the edge zone has been under-polished.

Referring to FIG. 18, any required adjustments are made to the polishingrates and a product substrate is polished. Polishing of the productsubstrate can be monitored and fed into subsequent substrates. This cancorrect any drifting in polishing rates between polishing productsubstrates.

During the polishing process, it is preferred to only make changes inthe polishing rates a few times, such as four, three, two or only onetime. The adjustment can be made near the beginning, at the middle ortoward the end of the polishing process. Associating the spectra with anindex number creates a linear comparison for polishing at each of thezones and can simplify calculations required to determine how to controlthe polishing process and obviate complex software or processing steps.

In some polishing schemes, it is not important that the oxide is clearedfrom the substrate. Therefore, the expected endpoint time is only usedas a guideline for when polishing should be stopped. As its nameindicates, the estimated endpoint time can be used to estimate thepolishing endpoint and the actual polishing endpoint can be called whenthe final desired profile for the substrate is detected using theoptical monitoring system.

The spectra obtained from different zones of the substrate can indicatethe profile of the substrate, but do not necessarily provide a precisethickness of the oxide layer. Thus, some of the spectra-based polishingrate adjustment methods described herein can be used to monitor therelative thicknesses of the oxide across the substrate. Because thespectra-based methods can be used to determine and adjust the polishingrates within zones of the substrate, the spectra-based methods can alsocompensate for the incoming thickness variation of the substrate, aswell as polishing induced within wafer non-uniformity.

As described herein, the relative thickness can be used required toachieve the desired substrate profile. In some of the examples above,the desired substrate profile after polishing is a flat profile.However, a profile that is other than flat can also be achieved. Often,a substrate is polished on more than one platen. Some polishingprocesses are known to inherently polish one zone faster than another.To compensate for this non-uniform polishing, polishing at a firstplaten can be controlled to leave one zone thicker than another, such asthe zone that will be polished faster on a subsequent platen. Thisdifference in thickness can be achieved by selecting a difference intarget index numbers or a ratio between an ending index number for onezone versus another.

Embodiments of the invention and all of the functional operationsdescribed in this specification can be implemented in digital electroniccircuitry, or in computer software, firmware, or hardware, including thestructural means disclosed in this specification and structuralequivalents thereof, or in combinations of them. Embodiments of theinvention can be implemented as one or more computer program products,i.e., one or more computer programs tangibly embodied in an informationcarrier, e.g., in a machine readable storage device or in a propagatedsignal, for execution by, or to control the operation of, dataprocessing apparatus, e.g., a programmable processor, a computer, ormultiple processors or computers. A computer program (also known as aprogram, software, software application, or code) can be written in anyform of programming language, including compiled or interpretedlanguages, and it can be deployed in any form, including as a standalone program or as a module, component, subroutine, or other unitsuitable for use in a computing environment. A computer program does notnecessarily correspond to a file. A program can be stored in a portionof a file that holds other programs or data, in a single file dedicatedto the program in question, or in multiple coordinated files (e.g.,files that store one or more modules, sub programs, or portions ofcode). A computer program can be deployed to be executed on one computeror on multiple computers at one site or distributed across multiplesites and interconnected by a communication network.

The processes and logic flows described in this specification can beperformed by one or more programmable processors executing one or morecomputer programs to perform functions by operating on input data andgenerating output. The processes and logic flows can also be performedby, and apparatus can also be implemented as, special purpose logiccircuitry, e.g., an FPGA (field programmable gate array) or an ASIC(application specific integrated circuit).

The above described polishing apparatus and methods can be applied in avariety of polishing systems. Either the polishing pad, or the carrierhead, or both can move to provide relative motion between the polishingsurface and the substrate. For example, the platen may orbit rather thanrotate. The polishing pad can be a circular (or some other shape) padsecured to the platen. Some aspects of the endpoint detection system maybe applicable to linear polishing systems, e.g., where the polishing padis a continuous or a reel-to-reel belt that moves linearly. Thepolishing layer can be a standard (for example, polyurethane with orwithout fillers) polishing material, a soft material, or afixed-abrasive material. Terms of relative positioning are used; itshould be understood that the polishing surface and substrate can beheld in a vertical orientation or some other orientation.

Particular embodiments of the invention have been described. Otherembodiments are within the scope of the following claims. For example,the methods described herein can be used for determining a polishingendpoint or for setting up and calibrating a polishing system prior topolishing actual wafers. The actions recited in the claims can beperformed in a different order and still achieve desirable results.

1. A computer-implemented method, comprising: obtaining a first spectrumof reflected light from a first zone on a substrate and a secondspectrum from a second zone on the substrate during a polishingsequence; comparing the first spectrum and the second spectrum to aspectra library to determine a first index for the first spectrum and asecond index for the second spectrum; obtaining a third spectrum ofreflected light from the first zone and a fourth spectrum from thesecond zone at a different time during the polishing sequence; comparingthe third spectrum and the fourth spectrum to the library to determine athird index for the third spectrum and a fourth index for the fourthspectrum; determining a first polishing rate at the first zone from thefirst index and the third index and a second polishing rate at thesecond zone from the second index and the fourth index; and based on thefirst polishing rate, the second polishing rate, a first target relativethickness for the first zone and a second target relative thickness forthe second zone, determining an adjusted polishing rate for the secondzone to cause the second zone to be polished to the second targetrelative thickness at substantially the same time as the first zone ispolished to the first target relative thickness.
 2. The method of claim1, wherein the first zone is an inner zone and the second zone is anouter annular zone.
 3. The method of claim 1, wherein determining anadjusted polishing rate for the second zone includes determining whenthe first target relative thickness will be within a predeterminedthreshold from the second target relative thickness.
 4. The method ofclaim 1, wherein determining an adjusted polishing rate for the secondzone includes determining an estimated endpoint time for the polishingsequence.
 5. The method of claim 1, wherein obtaining the first spectrumand a second spectrum includes obtaining white light spectra.
 6. Themethod of claim 1, further comprising adjusting a parameter of thepolishing system to cause the second zone to be polished at the adjustedpolishing rate.
 7. The method of claim 6, wherein the step ofdetermining the adjusted polishing rate is performed on a set-upsubstrate and the step of adjusting a parameter of the polishing systemis performed on a product substrate.
 8. The method of claim 6, whereinthe step of determining the adjusted polishing rate is performed onproduct substrate and the step of adjusting a parameter of the polishingsystem is performed on the product substrate.
 9. The method of claim 6,wherein adjusting a parameter of the polishing system includes adjustingpressure.
 10. The method of claim 1, wherein determining an adjustedpolishing rate includes determining a rate of polishing which causes across section along a diameter of the substrate to have a flat profilewhen the polishing sequence is completed.
 11. The method of claim 1,wherein determining an adjusted polishing rate includes determining arate of polishing which causes a cross section along a diameter of thesubstrate to have a non-flat profile when the polishing sequence iscompleted.
 12. The method of claim 1, wherein obtaining the firstspectrum and the second spectrum includes sampling the substrate atdifferent rotational locations.
 13. The method of claim 1, whereinobtaining the first spectrum and the second spectrum includes measuringspectra reflected from an oxide layer.
 14. The method of claim 1,further comprising: polishing a set up substrate until the set upsubstrate is overpolished; obtaining a plurality of spectra from asingle zone of the test substrate during the polishing; and storing theplurality of spectra in combination with a time at which each spectrumwas obtained to create the spectra library.
 15. The method of claim 14,further comprising creating indexes for the spectra library, wherein anindex represents a spectrum obtained from the set up substrate at aspecified time.
 16. A system configured to perform the method of claim1, comprising: a light source; a detector; and a controller configuredto perform the method of claim 1, including the steps of comparing thefirst spectrum and the second spectrum to a spectra library, comparingthe third spectrum and the fourth spectrum to the library, determining apolishing rate and determining an adjusted polishing rate.
 17. A methodof monitoring a chemical mechanical polishing process, comprising:directing a multi-wavelength light beam onto a substrate undergoing apolishing sequence and measuring a first spectrum of light reflectedfrom the substrate; causing the light beam to move in a path across thesubstrate surface; after causing the light beam to move, directing themulti-wavelength light beam onto the substrate during the polishingsequence and measuring a second spectrum of light reflected from thesubstrate; repeating the steps of directing the multi-wavelength lightbeam, causing the light beam to move in a path and after causing thelight beam to move, directing the multi-wavelength light beam at adifferent time during the polishing sequence to measure a third spectrumof reflected light and a fourth spectrum of reflected light from thesubstrate; determining a radial position on the substrate for each ofthe spectral measurements; sorting the spectral measurements into aplurality of radial ranges according to the radial positions, whereinthe first spectrum and the third spectrum correspond to a first radialrange and the second spectrum and fourth spectrum correspond to a secondradial range of the plurality of radial ranges; comparing the spectralmeasurements to a spectra library to determine a first index for thefirst spectrum, a second index for the second spectrum, a third indexfor the third spectrum and a fourth index for the fourth spectrum;determining a first polishing rate at the first radial range from theindices corresponding to the first radial range and a second polishingrate at the second radial range from the indices corresponding to thesecond radial range; and based on the first polishing rate, the secondpolishing rate, a first target relative thickness for the first radialrange and a second target relative thickness for the second radialrange, determining an adjusted polishing rate for the second radialrange to cause the second radial range to be polished to the secondtarget relative thickness at substantially the same time as the firstradial range is polished to the first target relative thickness.
 18. Themethod of claim 17, further comprising applying the adjusted polishingrate to the one of the radial ranges.
 19. A system for performing themethod of claim 17, comprising: a light source; a detector; and acontroller configured to perform the steps of claim 17, includingsorting the spectral measurements into a plurality of radial ranges anddetermining an adjusted polishing rate for the second radial range.